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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJ15002
DESCRIPTION *With TO-3 package *Complement to type MJ15001 *Excellent safe operating area APPLICATIONS *For high power audio,disk head positioners and other linear applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -15 -5 20 250 200 -65~200 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
MJ15002
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-2V VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-4A ; VCE=-2V VCE=-40Vdc,t=1 s, Nonrepetitive
-140
V
VCE(sat) VBE ICEO ICEX IEBO hFE
Collector-emitter saturation voltage
-1.0
V
Base-emitter on voltage
-2.0
V
Collector cut-off current
-0.25 -0.1 -2.0 -0.1
mA
Collector cut-off current
mA
Emitter cut-off current
mA
DC current gain
25
150
-5 A
Is/b
Second breakdown collector current With base forward biased VCE=-100Vdc,t=1 s, Nonrepetitive -0.5
COB fT
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz IC=-0.5A ; VCE=-10V;f=0.5MHz 2
1000
pF
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
MJ15002
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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